(China (Mainland))
Product Summary
The IXFH25N10 is a HIPERFET power MOSFTET. The IXFH25N10 is designed to provide superior dv/dt performence while eliminating the need for discrete, fast recovery free wheeling rectifiers in a broad range of power switching applications. The new dress of the IXFH25N10 uses process which improves the ruggedness of the FET while reducing the reverse recovery time of the intrinsic rectifier to less than 250ns at clevated junction temperature.
Parametrics
IXFH25N10 absolute maximum ratings: (1)Drain source voltage: 100V; (2)Drain current: 25A; (3)On resistance: 0.030Ohms; (4)Power Diss: 125W.
Diagrams
 |
 IXFH100N25P |
Ixys |
MOSFET 100 Amps 250V 0.027 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFH10N100P |
Ixys |
MOSFET 10 Amps 1000V |
Data Sheet |
Negotiable |
|
||||
|
IXFH110N15T2 |
Ixys |
MOSFET 110 Amps 150V |
Data Sheet |
Negotiable |
|
||||
|
IXFH12N120 |
Ixys |
MOSFET 12 Amps 1200V 1.3 Rds |
Data Sheet |
Negotiable |
|
||||
|
IXFH24N80P |
Ixys |
MOSFET DIODE Id24 BVdass800 |
Data Sheet |
Negotiable |
|
||||
|
IXFH230N10T |
Ixys |
MOSFET 230Amps 100V |
Data Sheet |
Negotiable |
|
||||
