Product Summary

The BDW84C is a Silicon Epitaxial-Base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. The BDW84C is intended for use in power linear and switching applications. The complementary type is BDW84C.

Parametrics

BDW84C absolute maximum ratings: (1)Collector-Base Voltage (IE = 0), VCBO: 100V; (2)Collector-Emitter Voltage (IB = 0), VCEO: 100V; (3)Emitter-Base Voltage (IC = 0), VEBO: 5V; (4)Collector Current, IC: 15A; (5)Collector Peak Current, ICM: 40A; (6)Base Current, IB: 0.5A; (7)Total Dissipation at Tc=25℃, Ptot: 130W; (8)Storage Temperature, Tstg: -65 to 150℃; (9)Max. Operating Junction Temperature, Tj: 150℃.

Features

BDW84C features: (1)BDW84C IS A STMicroelectronics preferred salestype; (2)complementary PNP - NPN devices; (3)high current capability; (4)fast switching speed; (5)high DC current gain.

Diagrams

BDW84C INTERNAL SCHEMATIC DIAGRAM

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BDW84C-S
BDW84C-S

Bourns

Transistors Darlington 150W 15A PNP

Data Sheet

Negotiable 
BDW84C
BDW84C

STMicroelectronics

Transistors Darlington PNP Power Darlington

Data Sheet

Negotiable