Product Summary

The UPA2722UT1A-E1 is a N-channel MOSFET designed for DC/DC converter applications.

Parametrics

UPA2722UT1A-E1 absolute maximum ratings: (1)Drain to Source Voltage (VGS = 0 V) VDSS 30 V; (2)Gate to Source Voltage (VDS = 0 V) VGSS ±20 V; (3)Drain Current (DC) ID(DC) ±16 A; (4)Drain Current (pulse) Note1 ID(pulse) ±96 A; (5)Total Power Dissipation Note2 PT1 1.5 W; (6)Total Power Dissipation (PW = 10 sec) Note2 PT2 4.6 W; (7)Channel Temperature Tch 150 ℃; (8)Storage Temperature Tstg -55 to +150 ℃; (9)Single Avalanche Current Note3 IAS 16 A; (10)Single Avalanche Energy Note3 EAS 26 mJ.

Features

UPA2722UT1A-E1 features: (1)Low on-state resistance: RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A); (2)RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A); (3)Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A); (4)Thin type surface mount package with heat spreader (8-pin HVSON); (5)RoHS Compliant.

Diagrams

UPA2722UT1A-E1 EQUIVALENT CIRCUIT

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