(China (Mainland))
Product Summary
The IRFS614B is a 250V N-channel MOSFET. The IRFS614B N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology of the IRFS614B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The IRFS614B is well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Parametrics
IRFS614B absolute maximum ratings: (1)VGSS Gate-Source Voltage: ± 30 V; (2)EAS Single Pulsed Avalanche Energy: 45 mJ; (3)IAR Avalanche Current: 2.8 A; (4)EAR Repetitive Avalanche Energy: 4.0 mJ; (5)dv/dt Peak Diode Recovery dv/dt: 5.5 V/ns; (6)TJ, TSTG Operating and Storage Temperature Range: -55 to +150 ℃; (7)TL, Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 ℃.
Features
IRFS614B features: (1)2.8A, 250V, RDS(on) = 2.0@VGS = 10 V; (2)Low gate charge ( typical 8.1 nC); (3)Low Crss ( typical 7.5 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
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Pricing (USD) |
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 IRFS614B |
Other |
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Data Sheet |
Negotiable |
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IRFS614B_FP001 |
Fairchild Semiconductor |
MOSFET 250V N-Channel B-FET |
Data Sheet |
Negotiable |
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