2SK2611

TO-3P, TOSHIBA field effect transistor, silicon N channel, MOS type, 720 V, 100 μA

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Price:: US $1.00~4.00 / piece [Get Latest Price]

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PartNumber:: 2SK2611

Brand:: Toshiba Semiconductor - Toshiba | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-11-10

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Part Number:2SK2611
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Product Summary

The 2SK2611 is a silicon N channel MOS type TOSHIBA field effect transistor.

Parametrics

2SK2611 absolute maximum ratings: (1)Drain power dissipation (Tc = 25℃) PD: 150 W; (2)Single pulse avalanche energy EAS: 663 mJ; (3)Avalanche current IAR: 9 A; (4)Repetitive avalanche energy EAR: 15 mJ; (5)Channel temperature Tch: 150 ℃; (6)Storage temperature range Tstg: -55~150 ℃; (7)Drain.source voltage VDSS: 900 V; (8)Drain.gate voltage (RGS = 20 kΩ) VDGR: 900V; (9)Gate.source voltage VGSS: ±30 V.

Features

2SK2611 features: (1)Low drain source ON resistance : RDS (ON) = 1.1 Ω (typ.); (2)High forward transfer admittance : |Yfs| = 7.0 S (typ.); (3)Low leakage current : IDSS = 100 μA (max) (VDS = 720 V); (4)Enhancement.mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA).