(China (Mainland))
Product Summary
The 2SJ512 is a Field Effect Transistor Silicon of P Channel MOS Type.
Parametrics
2SJ512 absolute maximum ratings: (1)Drain source voltage, VDSS: 250V; (2)Drain gate voltage (RGS = 20 kΩ), VDGR: 250V; (3)Gate source voltage, VGSS: ±20V; (4)Drain current Pulse, IDP: 20 A; (5)Drain power dissipation (Tc = 25℃), PD: 30W; (6)Single pulse avalanche energy, EAS: 155mJ; (7)Avalanche current, IAR: 5A; (8)Repetitive avalenche energy, EAR: 3.0mJ; (9)Channel temperature, Tch: 150℃; (10)Storage temperature range, Tstg: -55 to 150℃.
Features
2SJ512 features: (1)Low drain-source ON resistance : RDS (ON) = 1.0 Ω (typ.); (2)High forward transfer admittance : |Yfs| = 3.7 S (typ.); (3)Low leakage current : IDSS = -100 μA (max) (VDS = -250 V); (4)Enhancement mode : Vth = -1.5-3.5 V (VDS = -10 V, ID = -1 mA).
Diagrams
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 2SJ512 |
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Data Sheet |
Negotiable |
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2SJ501 |
Other |
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Negotiable |
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2SJ502 |
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2SJ503 |
Other |
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Negotiable |
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2SJ504 |
Other |
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Negotiable |
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2SJ505 |
Other |
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Data Sheet |
Negotiable |
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2SJ505(L) |
Other |
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Negotiable |
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