Product Summary

The 2SC5584 is a silicon NPN triple diffusion mesa type power transistor.

Parametrics

2SC5584 absolute maximum ratings: (1)Collector to base voltage, VCBO: 1500V; (2)Collector to emitter voltage, VCES: 1500V; (3)Collector to emitter voltage, VCEO: 600V; (4)Emitter to base voltage, VEBO: 7V; (5)Peak collector current, ICP: 30A; (6)Collector current, IC: 20A; (7)Base current, IB: 8A; (8)Collector power dissipation , TC = 25℃, PC: 150W; (9)Collector power dissipation , Ta = 25℃, PC: 3.5W; (10)Junction temperature, Tj: 150℃; (11)Storage temperature, Tstg: -55 to +150℃.

Features

2SC5584 features: (1)High breakdown voltage, and high reliability through the use of a glass passivation layer; (2)High-speed switching; (3)Wide area of safe operation (ASO).

Diagrams

2SC5584 Package Dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2SC5707
2SC5707
Other

Data Sheet
Negotiable 
2SC5707-E
2SC5707-E
ON Semiconductor
Transistors Bipolar (BJT) BIP NPN 8A 50V
Data Sheet
0-1: $0.70
1-25: $0.64
25-100: $0.56
100-250: $0.49
2SC5707-TL-E
2SC5707-TL-E

TRANS NPN BIPO 8A 50V TP-FA
Data Sheet
0-1400: $0.33