(China (Mainland))
Product Summary
The 2SA1941 is a TOSHIBA transistor with silicon PNP triple diffused type for power amplifier applications.
Parametrics
2SA1941 absolute maximum ratings: (1)Collector-base voltage, VCBO: -140V; (2)Collector-emitter voltage, VCEO: -140V; (3)Emitter-base voltage, VEBO: -5V; (4)Collector current, IC: -10A; (5)Base current, IB: -1A; (6)Collector power dissipation (Tc = 25℃), PC: 100W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
2SA1941 features: (1)High breakdown voltage: VCEO = -140 V (min); (2)Complementary to 2SC5198; (3)Recommended for 70-W high-fidelity audio frequency amplifier output stage.
Diagrams
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 2SA1941 |
Other |
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Data Sheet |
Negotiable |
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2SA1941-O(Q) |
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TRANSISTOR PNP 140V 10A TO-3PN |
Data Sheet |
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2SA1941-O(Q,T) |
Toshiba |
Transistors Bipolar (BJT) PNP VCEO -140V 70-W DC -10A 100W |
Data Sheet |
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